| 摘要 |
1,193,868. Semi-conductor devices. TEXAS INSTRUMENTS Inc. 28 June, 1967 [30 June, 1966], No. 29878/67. Heading H1K. [Also in Division C7] An ohmic contact is formed on a semi-conductor, e.g. silicon, substrate by first forming a layer of Pt or Al on the substrate and then sputtering layers of Mo and Au. The Au may also contain Pt by making the cathode of an Au-Pt alloy or with a Pt coating. A wafer 70 having a transistor on the left-hand end and a resistor on the right-hand end and an oxide coating 69, has the oxide coating removed at the contact positions, and a layer of Pt is evaporated over the whole surface. The substrate is heated at 700‹ C. to form platinum silicide at the contact positions, and the substrate is then boiled in aqua regia to remove the Pt on the oxide surface, leaving platinum silicide parts 81. The Mo layer 77 and the Au or Au-Pt alloy layer 78 are then sputtered, and an overlying Au layer 79 evaporated. The metal layers are then selectively removed to produce the desired pattern of contacts and interconnections. |
