Fabrication methods for multi-layer semiconductor structures

摘要

Methods are provided for fabricating multi-layer semiconductor structures. The methods include, for example: providing a first layer and a second layer over a substrate, the first layer including a first metal and the second layer including a second metal, where the second layer is disposed over the first layer and the first metal and second metal are different metals; and annealing the first layer, the second layer, and the substrate to react at least a portion of the first metal of the first layer to form a first reacted layer and at least a portion of the second metal of the second layer to form a second reacted layer, where at least one of the first reacted layer or the second reacted layer includes at least one of a first metal silicide of the first metal or a second metal silicide of the second metal.

主权项

1. A method comprising:
fabricating a semiconductor structure, the fabricating comprising:
providing a first layer and a second layer above a substrate, the first layer comprising a first metal and the second layer comprising a second metal, wherein the second layer is disposed over the first layer and the first metal and second metal are different metals; andannealing the first layer and the second layer to react at least a portion of the first metal of the first layer to form a first reacted layer and at least a portion of the second metal of the second layer to form a second reacted layer, wherein at least one of the first reacted layer or the second reacted layer comprises at least one of a first metal silicide of the first metal or a second metal silicide of the second metal, wherein said annealing comprises annealing at a first temperature to facilitate the second metal reacting but not the first metal reacting.