发明名称 HALFGELEIDERINRICHTING.
摘要 A bipolar transistor has an emitter, a base, a collector and additional region which is electrically connected to the base region. The additional region is formed parallel to an emitter-base junction to inject minority carriers into the emitter and has a plurality of windows therein where a plurality of ohmic contacts for the emitter are located.
申请公布号 NL7415073(A) 申请公布日期 1975.05.21
申请号 NL19740015073 申请日期 1974.11.19
申请人 SONY CORPORATION (SONY KABUSHIKIKAISHA) TE TOKIO. 发明人
分类号 H01L29/73;H01L21/331;H01L23/48;H01L27/00;H01L29/00;(IPC1-7):01L29/70;01L29/06 主分类号 H01L29/73
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