Method of forming semiconductor device having a conductive via structure

摘要

A method for fabricating a semiconductor device includes forming a first photo-sensitive layer over a contact pad, wherein the contact pad is on a substrate. The method further includes patterning the first photo-sensitive layer to form a first opening over a portion of the contact pad. The method further includes plating a conductive via in the first opening; and removing the first photo-sensitive layer. The method further includes forming a passivation layer over the substrate, contact pad, and conductive via, and exposing the conductive via by grinding the passivation layer. The method further includes forming a second photo-sensitive layer over the conductive via and passivation layer. The method further includes patterning the second photo-sensitive layer to form a second opening larger than and completely exposing the conductive via. The method further includes plating a conductive pillar in the second opening; and removing the second photo-sensitive layer.

主权项

1. A method of fabricating a semiconductor device, comprising the steps of:
forming a first photo-sensitive layer over a contact pad, wherein the contact pad is on a substrate; patterning the first photo-sensitive layer to form a first opening over a portion of the contact pad; plating a conductive via in the first opening; removing the first photo-sensitive layer; forming a passivation layer over the substrate, contact pad, and conductive via, and exposing the conductive via by grinding the passivation layer; forming a second photo-sensitive layer over the conductive via and passivation layer; patterning the second photo-sensitive layer to form a second opening larger than and completely exposing the conductive via; plating a conductive pillar in the second opening; and removing the second photo-sensitive layer.