Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films

摘要

Methods and apparatus for treating an organic film such as photoresist with a hydroxyl-generating compound prior to removing the organic film from a substrate are provided. Treatments include exposure to one or more of hydrogen peroxide vapor and water vapor in a non-plasma environment. In some implementations, conditions are such that condensation on the surface is suppressed. Methods include treating high-dose ion-implantation photoresists and post-plasma doping photoresists with little or no material loss and permit mild plasma removal of the photoresist after treatment.

主权项

1. A method of removing an organic film from a substrate, comprising:
exposing the organic film to hydrogen peroxide vapor to modify the organic film under non-plasma conditions at a chamber pressure between 0.6 Torr and 760 Torr; and after exposing the organic film to the hydrogen peroxide vapor, exposing the organic film to a plasma to remove the organic film.