Wafer platen thermosyphon cooling system

摘要

Disclosed is a thermosyphon system for cooling a platen in an ion implantation system. The thermosyphon system may include a vacuum chamber housing at least one wafer platen and a phase separator tank operative to contain both a liquid and gas phases of an element. A re-condensing cold head is exposed within the phase separator tank and is operative to condense the element from its gas phase to its liquid phase. This creates a convection driven closed loop pipe configuration. The closed loop pipe configuration includes a liquid phase pipe to carry the lower temperature liquid phase from the phase separator tank to the platen in the vacuum chamber. A reaction with the warmer platen converts the liquid phase to the gas phase. A gas phase pipe carries the higher temperature gas phase from the platen in the vacuum chamber back to the phase separator tank.

主权项

1. A thermosyphon system for cooling a substrate in an ion implantation system, the system comprising:
a vacuum chamber housing a process wafer platen and a pre-cooling wafer platen; a phase separator tank operative to contain both a liquid and gas phases of an element; a re-condensing cold head exposed within the phase separator tank operative to condense the element from its gas phase to its liquid phase; and a convection driven closed loop pipe configuration comprising: a liquid phase pipe to carry the lower temperature liquid phase of the element from the phase separator tank to the process wafer platen and the pre-cooling wafer platen in the vacuum chamber where enthalpy converts the liquid phase of the element to the gas phase of the element, the liquid phase pipe further comprising a first liquid phase branch that abuts the process wafer platen, and a second liquid phase branch that abuts the pre-cooling wafer platen; and a gas phase pipe to carry the higher temperature gas phase of the element from the process wafer platen and the pre-cooling wafer platen in the vacuum chamber to the phase separator tank, the gas phase pipe further comprising a first gas phase branch that abuts the process wafer platen and a second gas phase branch that abuts the pre-cooling wafer platen, wherein the first liquid phase branch and the first gas phase branch are disposed on a same side of the process wafer platen, wherein the second liquid phase branch and the second gas phase branch are disposed on a same side of the pre-cooling wafer platen, and wherein the first liquid phase branch, the second liquid phase branch, the first gas phase branch, and second gas phase branch are disposed within the vacuum chamber.