发明名称 |
Method for evaluating charged particle beam drawing apparatus |
摘要 |
In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating the apparatus includes making a shot of a first pattern, controlling a deflection amount by the deflector to move an applied position of the beam from the first pattern along a first direction to make a shot of a second pattern, controlling the deflection amount to move the applied position from the second pattern along the first direction to make a shot of a third pattern, controlling the deflection amount to move the applied position from the third pattern along a second direction opposite to the first direction to make a shot of a fourth pattern between the second pattern and the third pattern, calculating an interval between the second pattern and the fourth pattern, and comparing the calculated interval to a reference interval. |
申请公布号 |
US9514915(B2) |
申请公布日期 |
2016.12.06 |
申请号 |
US201514956860 |
申请日期 |
2015.12.02 |
申请人 |
NuFlare Technology, Inc. |
发明人 |
Hirose Satoru;Ohnishi Takayuki |
分类号 |
H01J37/00;H01J37/304;H01J37/317 |
主分类号 |
H01J37/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for evaluating a charged particle beam drawing apparatus which performs drawing by deflecting a charged particle beam with a deflector disposed on an optical path for the charged particle beam, the method comprising:
making a shot of a first pattern; controlling an amount of deflection by the deflector to move an applied position of the charged particle beam from the first pattern along a first direction, and making a shot of a second pattern; controlling the amount of deflection by the deflector to move the applied position of the charged particle beam from the second pattern along the first direction, and making a shot of a third pattern; controlling the amount of deflection by the deflector to move the applied position of the charged particle beam from the third pattern along a second direction opposite to the first direction, and making a shot of a fourth pattern between the second pattern and the third pattern; measuring positions of the second pattern and the fourth pattern and calculating an interval between the second pattern and the fourth pattern; and comparing the calculated interval to a reference interval. |
地址 |
Yokohama-shi JP |