| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate, capable of improving throughput per unit time while reducing dislocation density.SOLUTION: In a method for manufacturing a semiconductor substrate, a GaN layer is deposited at a predetermined GaN deposition temperature on a base substrate in which monocrystalline SiC is present at least in the outermost surface layer. In the method for manufacturing a semiconductor substrate, a first step of depositing GaN at a GaN deposition temperature after depositing an AlInGaN (0<x≤1, 0≤y≤1, x+y≤1) layer under a temperature higher than the GaN deposition temperature on the SiC is performed, and then a second step of depositing GaN at the GaN deposition temperature after depositing an AlInGaN (0<x≤1, 0≤y≤1, x+y≤1) layer under a temperature lower than the GaN deposition temperature is performed, while the temperature for depositing the AlInGaN (0<x≤1, 0≤y≤1, x+y≤1) layer in the second step is at least 800°C or above. |
