发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT ISOLATED THROUGH DIELECTRIC MATERIAL
摘要 1430425 Integrated circuits TOKYO SHIBAURA ELECTRIC CO Ltd 10 May 1973 [13 May 1972] 22321/73 Heading H1K The subject-matter of this Specification is described in Specification 1,363,223 but the claims are directed to an integrated circuit comprising a support substrate, at least one dishshaped outer dielectric layer, the upper end of which is open at the top surface of the substrate, enclosing an island region, an inner dielectric layer in the form of an open-bottomed dish, the side walls of which are inclined inwards towards the open bottom, formed within the outer dielectric layer, the island region having an outer semi-conductor region defined between the inner and outer dielectric layers and an inner semi-conductor region, the cross-sectional area of which decreases towards the bottom formed within the inner dielectric layer, at least one device being formed in the island region and including a PN junction, the periphery of which abuts the inner wall of the inner dielectric layer.
申请公布号 GB1430425(A) 申请公布日期 1976.03.31
申请号 GB19730022321 申请日期 1973.05.10
申请人 TOKYO SHIBAURA ELECTRIC CO LTD 发明人
分类号 H01L21/762;H01L23/535;H01L27/00;(IPC1-7):01L29/06;01L27/04 主分类号 H01L21/762
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