| 摘要 |
In order to provide a semiconductor optical element having excellent characteristics even if the semiconductor optical element is a Ge optical element formed on a Si oxide film, this semiconductor optical element is provided with a semiconductor substrate 101, an insulating film 102, an n-type or undoped single crystal Ge layer 104, and p-type extraction electrodes 105, 106, which are formed on the side surface of the n-type or undoped single crystal Ge layer. The p-type extraction electrodes 105, 106 have an electrode section and a wiring section, and the upper surface of the electrode section is at a height equal to that of the upper surface of the n-type or undoped single crystal Ge layer 104, and is higher than the upper surface of the wiring section. |
