发明名称
摘要 <p>The semiconductor display has a first ohmic contact for the n-conductive region and at least a second contact for the p-conductive region, the second contact shaping the information to be displayed. Between the two regions of opposite conductivity is provided a compensating region with a luminescence activator, as well as an additional region with structural defects, abutting the second ohmic contact. The additional region (7) has a thickness exceeding that of the p-conductive region (3) by at least 0.05 microns. The structural deflects in this region represent clusters with a concentration of 1019 - 1022 cm - 3. The additionalk region (7) is a two-layer structure whose first layer (8) abuts directly the second ohmic contact (6).</p>
申请公布号 CH576191(A5) 申请公布日期 1976.05.31
申请号 CH19740004524 申请日期 1974.04.01
申请人 KARATSJUBA, ANATOLY PROKOFIEVICH 发明人
分类号 H01L27/15;H01L33/00;(IPC1-7):01L33/00 主分类号 H01L27/15
代理机构 代理人
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