| 摘要 |
The invention is a method of improving production of shaped crystalline bodies according to the processes described in U.S. Pat. Nos. 3,591,348 and 3,471,266. It consists of optically monitoring the height of a vertical liquid meniscus in the region of the growth zone and adjusting the rate of heating or the rate of crystal pulling to maintain the height of the liquid meniscus between selected limits, with the result that outside dimensions of the crystalline product, e.g. the outside diameter of a sapphire tube, will be substantially unvarying and will meet preset tolerances. |
