发明名称 Apparatus and methods for ultrasound probes
摘要 Apparatus and methods for ultrasound probes are provided. In certain implementations, a receive switch for an ultrasound probe includes a first field effect transistor (FET) and a second FET electrically connected in series between a first terminal and a second terminal with the FETs' sources connected to one another. The receive switch includes a positive threshold detection and control circuit for turning off the receive switch when a voltage of the first terminal is greater than a positive threshold voltage, and a negative threshold detection and control circuit for turning off the receive switch when the first terminal's voltage is less than a negative threshold voltage. The receive switch further includes a gate bias circuit that can bias the gates of the first and second FETs so as to turn on the receive switch when no positive or negative high voltage conditions are detected on the first terminal.
申请公布号 US9479162(B2) 申请公布日期 2016.10.25
申请号 US201213687654 申请日期 2012.11.28
申请人 ANALOG DEVICES, INC. 发明人 Barlow Allen R;Taylor Gerard E;Petersen Corey D
分类号 H03K17/693;B06B1/02 主分类号 H03K17/693
代理机构 Knobbe Martens Olson & Bear LLP 代理人 Knobbe Martens Olson & Bear LLP
主权项 1. A receive switch comprising: a first terminal; a second terminal; a first field effect transistor (FET) including a first drain electrically connected to the first terminal, a first gate electrically connected to a gate node, and a first source electrically connected to a source node; a second FET including a second drain electrically connected to the second terminal, a second source electrically connected to the source node, and a second gate electrically connected to the gate node; a first threshold detection and control circuit configured to detect a voltage of the first terminal and to turn off at least one of the first FET or the second FET when the voltage of the first terminal is greater than a first threshold voltage; a second threshold detection and control circuit configured to detect the voltage of the first terminal and to turn off at least one of the first FET or the second FET when the voltage of the first terminal is less than a second threshold voltage; and a gate bias circuit configured to turn on the first and second FETs when neither the first threshold detection and control circuit nor the second threshold detection and control circuit is active to turn off the first or second FETs.
地址 Norwood MA US