| 发明名称 |
SEMICONDUCTOR LASER |
| 摘要 |
<p>PURPOSE:Increase reflection index and reduce Jth by forming a semiconductive layer whose forbidden band width is larger than that of active region and which has a large refraction index at one edge of semiconductive active region.</p> |
| 申请公布号 |
JPS5224480(A) |
申请公布日期 |
1977.02.23 |
| 申请号 |
JP19750101361 |
申请日期 |
1975.08.20 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
ITOU KUNIO;KAZUMURA MASARU |
| 分类号 |
H01L33/30;H01S5/00;H01S5/042 |
主分类号 |
H01L33/30 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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