| 发明名称 |
RADIO FREQUENCY ISOLATION USING SUBSTRATE OPENING |
| 摘要 |
Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over a an oxide layer formed on a substrate layer and removing at least a portion of the substrate layer to form an opening exposing at least a portion of a backside of the oxide layer, the opening being positioned to enhance RF performance for one or more components of the RF device. |
| 申请公布号 |
US2016336991(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615154846 |
申请日期 |
2016.05.13 |
| 申请人 |
SKYWORKS SOLUTIONS, INC. |
发明人 |
MASON Jerod F.;BARTLE Dylan Charles;WHITEFIELD David Scott |
| 分类号 |
H04B1/401;H01L27/12;H01L21/768;H01L23/66;H01L23/48;H01L21/84;H01L23/528 |
主分类号 |
H04B1/401 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a radio-frequency (RF) device, the method comprising:
providing a field-effect transistor (FET) formed over a an oxide layer formed on a substrate layer; and removing at least a portion of the substrate layer to form an opening exposing at least a portion of a backside of the oxide layer, the opening being positioned to enhance RF performance for one or more components of the RF device. |
| 地址 |
Woburn MA US |
