发明名称 |
CHARGE STORAGE SOLID STATE DEVICES |
摘要 |
<p>An electronic solid state device comprising a layer in which the electrical conductivity is controlled by a plurality of isolated discrete regions distributed within the bulk of the layer and forming potential barriers with semi conductor material of the layer surrounding the discrete regions. Electrical charge is stored in the layer by the discrete regions and the charging is obtained by the application of a potential pulse across the discrete regions. In a preferred operational mode the charging potential is applied such that current conduction paths in the layer are blocked by the depletion regions associated with the potential barrier for applied interrogation potentials across the regions of substantially smaller magnitude than the charging pulse. The device may consist of an imaging device having high charges gain and particular embodiments described consist of an image intensifier, an imaging active photocathode and a target plate of a vidicon camera tube.</p> |
申请公布号 |
CA1012244(A) |
申请公布日期 |
1977.06.14 |
申请号 |
CA19740202179 |
申请日期 |
1974.06.11 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
SHANNON, JOHN M.;RALPH, JOHN E.;SCHAGEN, PIETER |
分类号 |
H01J29/45;G03G5/024;G03G5/087;G11C16/04;H01J1/34;H01J29/36;H01L27/146;H01L29/00;H01L31/0264;H01L31/0384;H01L31/112;H01L31/14;H01L31/153 |
主分类号 |
H01J29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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