| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
PURPOSE:To obtain a memory device of high injection efficiency and high reliability by providing charge capturing regions through an insulating film on the surface of the recesses formed in channel regions. |
| 申请公布号 |
JPS52115669(A) |
申请公布日期 |
1977.09.28 |
| 申请号 |
JP19760031930 |
申请日期 |
1976.03.25 |
| 申请人 |
TOKYO SHIBAURA ELECTRIC CO |
发明人 |
MASUOKA FUJIO |
| 分类号 |
H01L21/8247;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8247 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
