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发明名称
PRODUCTION OF GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR
摘要
申请公布号
JPS52123178(A)
申请公布日期
1977.10.17
申请号
JP19760039738
申请日期
1976.04.08
申请人
NIPPON ELECTRIC CO
发明人
NOZAKI TADATOSHI
分类号
H01L29/80;H01L21/265;H01L21/338;H01L29/20;H01L29/207;H01L29/812
主分类号
H01L29/80
代理机构
代理人
主权项
地址
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