发明名称 |
TEXTILE PATTERNING FOR SUBTRACTIVELY-PATTERNED SELF-ALIGNED INTERCONNECTS, PLUGS, AND VIAS |
摘要 |
Embodiments of the invention include methods of forming a textile patterned hardmask. In an embodiment, a first hardmask and a second hardmask are formed over a top surface of an interconnect layer in an alternating pattern. A sacrificial cross-grating may then be formed over the first and second hardmaskS. In an embodiment, portions of the first hardmask that are not covered by the sacrificial cross-grating are removed to form first openings and a third hardmask is disposed into the first openings. Embodiments may then include etching through portions of the second hardmask that are not covered by the sacrificial cross-grating to form second openings. The second openings may be filled with a fourth hardmask. According to an embodiment, the first, second, third, and fourth hardmasks are etch selective to each other. In an embodiment the sacrificial cross-grating may then be removed. |
申请公布号 |
WO2016209293(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2015US38145 |
申请日期 |
2015.06.26 |
申请人 |
INTEL CORPORATION;LIN, Kevin;BRISTOL, Robert Lindsey;MYERS, Alan M. |
发明人 |
LIN, Kevin;BRISTOL, Robert Lindsey;MYERS, Alan M. |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|