APPARATUS FOR DETECTING ELECTRONIC FAULTS ON SILICON-BASED SEMICONDUCTOR WAFERS

摘要

An apparatus (1) for detecting electronic faults at inclusions and grain boundaries on silicon-based semiconductor wafers (2) has an illumination device (8) for illuminating the semiconductor wafers (2) with an optical excitation radiation (9) that can be used to excite the semiconductor wafers (2) to emit a photoluminescent radiation (10). To detect the photoluminescent radiation (10) emitted by a measuring point (8), a measuring device (15) is provided that has at least one semiconductor sensor chip, having a sensor area that is sensitive to the photoluminescent radiation (10), and an optical system (17), which can be used to influence the spatial propagation of the photoluminescent radiation (10) emitted by a measuring point (8) such that it impinges on the entire sensor area. The semiconductor wafer (2) is positionable at the measuring point (8) by means of a positioning device (21) that has a contact area (27) for the at least one semiconductor wafer (2), and is movable relative to the measuring point (8) parallel to a plane defined by the contact area (27). The at least one semiconductor sensor chip has an evaluation device (28) connected to it that is designed to detect the recurrence of grain boundary faults on the basis of the measurement signal (29) from the at least one semiconductor sensor chip. The largest dimension that the measuring point (8) has in the plane defined by the contact area (27) is smaller than 10 mm.