发明名称 |
Nonvolatile memory device and method for sensing the same |
摘要 |
A nonvolatile memory device includes a first resistive memory cell connected to a first word line, a second resistive memory cell connected to a second word line that is different from the first word line, a clamping unit connected between a sensing node and the first resistive memory cell to provide a clamping bias to the first resistive memory cell, a reference current supplying unit connected to the second resistive memory cell to supply a reference current, and a sense amplifier connected to the sensing node to sense a level change of the sensing node, wherein when the first word line is enabled, the second word line is disabled. |
申请公布号 |
US9478302(B2) |
申请公布日期 |
2016.10.25 |
申请号 |
US201514687409 |
申请日期 |
2015.04.15 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Mu-Hui |
分类号 |
G11C7/00;G11C16/28;G11C7/06;G11C11/16;G11C11/56;G11C13/00;G11C11/22 |
主分类号 |
G11C7/00 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A nonvolatile memory device comprising:
a first resistive memory cell connected to a first word line; a second resistive memory cell connected to a second word line that is different from the first word line; a clamping unit connected between a sensing node and the first resistive memory cell and configured to provide a clamping bias to the first resistive memory cell; a reference current supplying unit connected to the second resistive memory cell and configured to supply a reference current to the second resistive memory cell; a sense amplifier connected to the sensing node, the sense amplifier being configured to sense a level change of the sensing node; a controller configured to perform a sensing operation such that when the first word line is enabled, the second word line is disabled; and a precharge voltage supplying unit configured to supply a precharge voltage to the first resistive memory cell, wherein the precharge voltage comprises a first precharge voltage and a second precharge voltage, and wherein a time required to provide the second precharge voltage to the first resistive memory cell is longer than a time required to provide the first precharge voltage to the first resistive memory cell. |
地址 |
Suwon-si, Gyeonggi-do KR |