发明名称 SEMICONDUCTOR RADIATION DETECTOR
摘要 PURPOSE:To facilitate electrode lead-out and obtain a stable catalyst by stepwise increasing the thickness of metal layers forming the surface junction of a detector from wafer to mounting base.
申请公布号 JPS5390780(A) 申请公布日期 1978.08.09
申请号 JP19770004427 申请日期 1977.01.20
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 MATSUO NOBORU;KOBAYASHI TETSUJI;SUGITA TOORU
分类号 G01T1/24;H01L31/0224;H01L31/09 主分类号 G01T1/24
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