| 摘要 |
The present invention provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor comprises a gate, an active layer, a source and a drain formed on a substrate, the active layer comprises an oxide having doped ions, the doped ions have a p-orbital electron arrangement structure, and an energy level of p-orbital of the doped ions is higher than that of 2p-orbital of oxygen ions in the oxide, so that top of valence band of the active layer is higher than the energy level of oxygen vacancies formed in the oxide. The active layer of the thin film transistor is made of the oxide having the doped ions, which may improve a stability of the thin film transistor, and there is no need to add a light blocking structure in the display device. |
