NON-PLANAR TRANSISTOR AND METHOD OF FORMING THE SAME

摘要

A non-planar transistor is provided. It includes a substrate, a fin structure, a gate structure, a spacer structure and a source/drain region. The fin structure is disposed on the substrate, the gate structure is disposed on the fin structure. The spacer structure is disposed on a sidewall of the gate structure. The spacer structure includes a first spacer with a first height and a second spacer with a second height, wherein the first spacer is disposed between the second spacer, and the first height is different from the second height. The source/drain region is disposed in a semiconductor layer at two sides of the spacer structure. The present invention further provides a method of forming the same.

主权项

1. A non-planar transistor, comprising:
a fin structure disposed on a substrate, wherein the fin structure comprises an upper portion, a concave portion and a lower portion, and the concave portion is disposed between the upper portion and the lower portion; a gate structure disposed on the fin structure; a first spacer structure disposed on a sidewall of the gate structure, wherein the first spacer structure comprises a first spacer and a second spacer, the first spacer is disposed between the gate structure and the second spacer, and a height of the first spacer is different from the a height of the second spacer; and a source/drain region disposed in a semiconductor layer at a side of the first spacer structure.