SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

摘要

A method of fabricating a semiconductor device. The method includes forming an isolation feature in a substrate, forming a first gate stack and a second gate stack over the substrate, forming a first recess cavity and a second recess cavity in the substrate, growing a first epitaxial (epi) material in the first recess cavity and a second epi material in the second recess cavity, and etching the first epi material and the second epi material. The first recess cavity is between the isolation feature and the first gate stack and the second recess cavity is between the first gate stack and the second gate stack. A topmost surface of the first epi material has a first crystal plane and a topmost surface of the second epi material has a second crystal plane. The topmost surface of the etched first epi material has a third crystal plane different from both the first crystal plane and the second crystal plane.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming an isolation feature in a substrate; forming a first gate stack and a second gate stack over the substrate; forming a first recess cavity and a second recess cavity in the substrate, wherein the first recess cavity is between the isolation feature and the first gate stack and the second recess cavity is between the first gate stack and the second gate stack; growing a first epitaxial (epi) material in the first recess cavity and a second epi material in the second recess cavity, wherein a topmost surface of the first epi material has a first crystal plane and a topmost surface of the second epi material has a second crystal plane; and etching the first epi material and the second epi material, wherein the topmost surface of the etched first epi material has a third crystal plane different from both the first crystal plane and the second crystal plane.