发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a fin-shaped silicon layer on a silicon substrate surface. The fin-shaped silicon layer has a longitudinal axis extending in a first direction parallel to the surface and a first insulating film is around the fin-shaped silicon layer. A pillar-shaped silicon layer is on the fin-shaped silicon layer, and a pillar diameter of the bottom of the pillar-shaped silicon layer is equal to a fin width of the top of the fin-shaped silicon layer. The pillar diameter and the fin width are parallel to the surface. A gate insulating film is around the pillar-shaped silicon layer and a metal gate electrode is around the gate insulating film. A metal gate wiring is connected to the metal gate electrode and has a longitudinal axis extending in a second direction parallel to the surface and perpendicular to the first direction of the longitudinal axis of the fin-shaped silicon layer. |
申请公布号 |
US2016336444(A1) |
申请公布日期 |
2016.11.17 |
申请号 |
US201615221091 |
申请日期 |
2016.07.27 |
申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
分类号 |
H01L29/78;H01L29/423;H01L21/308;H01L29/66;H01L21/265;H01L29/45;H01L29/10;H01L29/08 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a fin-shaped silicon layer on a surface of a silicon substrate, the fin-shaped silicon layer having a longitudinal axis extending in a first direction parallel to the surface; a first insulating film around the fin-shaped silicon layer; a pillar-shaped silicon layer on the fin-shaped silicon layer, a pillar diameter of the bottom of the pillar-shaped silicon layer being equal to a fin width of the top of the fin-shaped silicon layer, the pillar diameter and the fin width parallel to the surface of the silicon substrate; a gate insulating film around the pillar-shaped silicon layer; a metal gate electrode around the gate insulating film; and a metal gate wiring connected to the metal gate electrode, the metal gate wiring having a longitudinal axis extending in a second direction parallel to the surface and perpendicular to the first direction of the longitudinal axis of the fin-shaped silicon layer. |
地址 |
Peninsula Plaza SG |