| 发明名称 |
ACCESSING A RESISTIVE STORAGE ELEMENT-BASED MEMORY CELL ARRAY |
| 摘要 |
A technique includes reading a row of memory cells of a memory cell array, where each of the memory cells includes comprising a resistive storage element and is associated with a column line. The technique includes, in association with the reading, coupling the column lines to a ground connection. |
| 申请公布号 |
US2016336062(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201415111185 |
申请日期 |
2014.01.31 |
| 申请人 |
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP |
发明人 |
BUCHANAN Brent E. |
| 分类号 |
G11C13/00;G11C11/16 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
reading a row of memory cells of a memory cell array, each of the memory cells comprising a resistive storage element and being associated with a column line; and in association with the reading, coupling the column lines to a ground connection. |
| 地址 |
Houston TX US |
