HIGH PRESSURE OXIDIZING METHOD OF SILICON,申请号JP19770130653-传众专利搜索

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发明名称	HIGH PRESSURE OXIDIZING METHOD OF SILICON
摘要
申请公布号	JPS5464473(A)	申请公布日期	1979.05.24
申请号	JP19770130653	申请日期	1977.10.31
申请人	FUJITSU LTD	发明人	TAKAGI MIKIO;MAEDA MAMORU;KAMIOKA HAJIME
分类号	H01L21/316	主分类号	H01L21/316
代理机构		代理人
主权项
地址

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