发明名称 DICING METHOD FOR WAFER
摘要 <p>PURPOSE:To cut the substrate of hard and feeble nature, by providing the semiconductor material, organic substrate having greater viscossity, or metal guard ring at the plane scheduled for dicing. CONSTITUTION:The guard ring 13 of Si02 is placed at the cut region 11 between element forming regions except the region 12 in contact with the blade. When cutting is made toward thicknesswise along the cut region, chipping 21 is produced at the region 11. The guard ring layer 13 absorbs the vibration at the tip of blade and becomes the cushion wall, and no chipping reaches the element region 10. With this constitution, independently of the condition of blade tip, the chipping region due to dicing is maede smaller and the integration density can be increased. Further, since no guard ring is present at the surface contacted with the blade, the life of the blade can be extended.</p>
申请公布号 JPS5487169(A) 申请公布日期 1979.07.11
申请号 JP19770154474 申请日期 1977.12.23
申请人 HITACHI LTD 发明人 MORITA TADAHISA;UNNO TASUKU
分类号 H01L21/301;H01L21/302;H01L21/78 主分类号 H01L21/301
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