| 摘要 |
<p>PURPOSE:To avoid the short circuit on the side surface of the device when the electrode terminal of the semiconductor device is connected to the wiring through the opening by forming the film carrier by adhering the metal foil wiring on the surface of the flexible tape which is insulating electrically and then coating the electric insulating organic resin containing the fixed opening on the metal foil wiring. CONSTITUTION:The copper foil is adhered with use of no adhesive on one surface of polyimide film 51, and then lead pattern 52 is formed through the photo etching. Then polyimide resin layer 53 is coated thin on pattern 52 and then hardened by burning, and then fixed opening part 54 is drilled again to layer 53 through the photo etching. After this, the tin plating is applied on exposed pattern 52, and gold vamp 56 of the semiconductor device is pressed there to cause the gold-tin eutectic alloy which is then adhered. In such way, no position shift is caused between vamp 56 and pattern 52, and at the same time the thin copper foil can be used. As a result, pattern 52 becomes minute.</p> |
