| 摘要 |
PURPOSE:To obtain an element featuring a high sensitivity to the control input with a high dielectric strength by connecting the FET gate to the anode or cathode of the thyristor. CONSTITUTION:P-channel type FET1 (N-channel type FET in the case of N gate- type TH) of a high dielectric strength is connected in series to cathode K of P gate-type thyristor TH (anode A in the case of N gate-type TH), and gate GF1 of FET1 is connected to anode A of P gate-type TH (cathode K in the case of N gate-type TH) or to TH control input terminal C. Thus, an element featuring a high dielectric strength as well as a high sensitivity to the control input can be obtained. |
