| 摘要 |
PURPOSE:To obtain an SiC plate with a large area by placing an Si substrate on a specimine table, growing a thin SiC film on the substrate in gaseous phase, heating the substrate to melt at a temerature at or above the melting point of Si and at or below 1,400 deg.C, spreading it on the specimine table, and using it as a substrate to grow SiC. CONSTITUTION:A water-cool dual vertical quartz reaction table 2 with a gas inlet port 18 at the top and working coils 8 outside of it is placed on a stainless steel flange 10 having a gas exhaust port 12 and a support 14 which supports a quartz support pole 16. Then a graphite support 4, on the top of which a specimine table 6 made of tantalum-silicide covered tantalum is provided, is inserted into the support pole 16, and an Si substrate 28 is placed on the specimine table 6. In this constitution, the substrate 28 is heated to the range of 1,100 to 1,200 deg.C, and a 3C- type SiC layer 30 is grown on the substrate 28 by the use of SiCl4 containing carrier gas. Then, the temperature is raised up to the range of 1,400 to 1,460 deg.C to melt only the substrate 28, and the solution 28' is spread on the specimine table 6 and cooled, whereby a thin SiC film 32 is grown on the layer 30 including the solution at 1,700 deg.C. |
