| 摘要 |
PURPOSE:To obtain the desired concentration of impurities in excellent controllability while stabilizing the surfaces of materials to be diffused, by using materials containing both the V group elements, which have specified atomic weight, and impurities as diffusion sources. CONSTITUTION:A III-V group compound substrate, such as, a GaAs substrate, etc. and materials containing both the lightest atomic weight V group compound element among the V group compounds constituting materials to be diffused, such as, Zn3P2, etc. or the V group elements, which have atomic weight lighter than the V group elements forming the materials to be diffused, and impurities for diffusion are entered into an ampul, and thermally diffused. In one instance, a p type layer 22 produced by diffusing Zn into GaAs substrate 21 and a P diffusion layer 23 are obtained. The diffusion layers of Zn and P are gained which the thickness of the Zn diffusion layer 22 and the P diffusion layer 23 increases in proportion to a square root of time and have extremely excellent controllability. This method is superior in the controllability of concentration because the concentration of Zn on the surfaces of the diffusion layers does not depend upon the change of diffusion time and is constant to temperature. Turbulence on a surface of the GaAs substrate, materials to be diffused, is not generated because of diffusion under an atmosphere of P, the V group element. |
