| 摘要 |
PURPOSE:To increase the preset time of the silicon sapphire C-MOS circuit by reducing the effect caused by the floating capacity to the preset enable wire for the preset circuit used for the programable counter. CONSTITUTION:Complementary MOS inverter circuit consists of P-type MOS transistors Tr12a, 12c...12k and N-type MOS Tr13a-13f. The sources of Tr12a, 12c...12k are connected to power terminal 10; the source sides of Tr13a-13f are connected to common terminal 14; and furthermore P-type MOS Tr12b and 12d... 12l are connected between the output terminal of the inverter and terminal 10. And preset enable wire 7 connected with N-type Tr13g is connected to the gates of Tr12b and 12d...12l. In such constitution, the 1st and 2nd inverter circuits are formed with the same number of steps as FF2a-2c forming programable counter 1, and then the gate of Tr13g connected to terminal 14 is connected to wire 7. |
