| 摘要 |
<p>For improving the control over a process for annealing surface layers (14) of semiconductor bodies (10) by melting the surface layer by a beam of radiant energy (21), the reflectivity of the surface of the layer is monitored (20, 22) to detect when the surface layer changes its state between molten and solid states, and the amount of radiant energy directed to the surface is controlled (24) in response to such change.</p> |
