| 摘要 |
<p>In a self-aligned, polycrystalline silicon gate MOSFET dynamic Random Access Memory formed in a semiconductor body with metal word lines and bit lines diffused into the semiconductor body, the capacitance of the diffused bit lines is undesirably high. This capacitance is reduced according to the present invention by forming the bit lines (50) from the same layer of polycrystalline silicon as the MOSFET gates (45A, 45B), the polycrystalline silicon bit lines (50) only contacting the semiconductor body (30) at the sources (41) of the MOSFETs (41, 42B, 43B). </p> |
