| 摘要 |
A stabilized SOS-FET is composed of a substrate(12) of electrically insulating material, a mesa(single crystal semiconductor material)(14) having side surfaces(36,38) extended transversely from the substrate, means defining a FET having a channel region extending between the source and drain regions and between two of the side surfaces, and doped regions(carrier concn. -5x106cm-3˜5x1019cm-3) (32,34), in the channel region, having more cond. modifers than in the remainder of the channel region.
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