| 摘要 |
PURPOSE:To facilitate the laying of lead wires for the electrode of a horizontal type SCR, by shaping a p-emitter layer as L shape, producing a p-base layer inside the L-shaped layer and providing an L-shaped n-emitter layer in face of the p-emitter layer. CONSTITUTION:A p-emitter layer 21 is shaped as L. A p-base layer 23 is provided inside the L-shaped layer 21. An L-shaped n-emitter layer 24 is provided in the layer 23 in face of the layer 24. This results in reducing the area of the p-base layer and the current amplification factor of a pnp-transistor and providing a horizontal type SCR having a degree of freedom in the direction of laying of electrode lead wires. |
