发明名称 |
Method for manufacturing silicon single crystal |
摘要 |
There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step. |
申请公布号 |
US9499924(B2) |
申请公布日期 |
2016.11.22 |
申请号 |
US201214236977 |
申请日期 |
2012.08.02 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
Kimura Akihiro;Takano Kiyotaka;Tokue Junya |
分类号 |
C30B15/10;C30B15/22;C30B15/00;C30B29/06 |
主分类号 |
C30B15/10 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A method for manufacturing a silicon single crystal, the method comprising:
a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and a pulling step of bringing a seed crystal into contact with a melt surface of the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite on a surface of the crucible while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step, wherein the dissolving step is performed for one hour or more and nine hours or less. |
地址 |
Tokyo JP |