| 摘要 |
PURPOSE:To obtain an SiC crystallized layer of a high degree of completeness by providing an Si substrate, having an SiC seed crystal formed surface, on a carbonized material layer, by fusing the above crystal, depositing an SiC secondary layer, and forming an SiC tertiary layer on the above secondary layer. CONSTITUTION:After forming a seed crystal layer 4, consisted of a mixture of an Si and SiC, on an Si substrate 2, an Si substrate is provided on a graphite base 26, the Si substrate is fused in an H2 atmosphere, and from this Si solution an SiC 14 is liquid-grown on the rear side of seed crystal layer 4. Then the Si is etched, removed from the graphite base 26, it is turned inside out and installed on another sample base 26'. After that, a CVD is performed in the mixed gas of SiH2Cl2, C3H3 and H2, and an SiC layer 15 is grown. Hence, a uniform SiC layer with slight distortion, resulted during crystallization, and a high degree of completeness can be obtained on the seed crystal layer 4. |
