| 摘要 |
PURPOSE:To enable performance of a laser annealing of an optimum wavelength suitable to the substance at each part of a semiconductor device and to enable handling with a low gradient of thermal efficiency in their respective parts by irradiating a plural number of laser beams with different oscillation frequencies with each other. CONSTITUTION:A laser beam source 1 is an Nb added YAG laser, and the other laser beam source 2 is a CO2 laser. The two laser beams emitted from the above beam sources respectively are composed in one optical beam by a total reflection mirror 6 arranged so as to have them in one beam, and then it is incidented upon a semiconductor element 5, a sample element. A sample 5 is placed on an X-Y table. In case an expander is used, it is placed in fixed condition. As above-mentioned, an optimum heat treatment can be performed for each section of the element by executing an annealing. Also a sufficient melting of a phosphor added silicon dioxide film is selectively performed. |
