| 摘要 |
PURPOSE:To prevent the short-circuit of conductors and the disconnection of a wire due to molten solder in a semiconductor device of the structure such that a cap and a stem having respectively metal portions to be coated with solder are sealed with framelike solder by forming an excessive solder absorbing metal in the inner periphery of the cap. CONSTITUTION:A metal 14 to be coated with solder is formed on the outer periphery of the surface of a ceramic cap substrate 13, and an excessive solder absorbing metal 15 having approx. 1mm wide is formed at an interval of 0.3-1mm on the inner periphery thereof to form a cap 12. A framelike solder 15 made of tin and lead eutectic solder or the like is placed on the metal to be coated with solder of the cap, a metal 17 to be coated with solder of a stem 16 mounted with a thin film substrate 19 such as a hybrid integrated circuit or the like is placed on the solder 15, and they are heated in a furnace so as to melt to seal the solder. Thus, since the molten solder 18 is adhered to the metal 15 even if it is flowed into the case during solder reflowing operation, it is not adhered to the conductor and wire 20 on a thin film substrate. |
