LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THEREOF
摘要
The present application discloses a light emitting diode comprising a substrate; and a light emitting layer on the substrate. The light emitting layer comprises, an N-type doped layer; a quantum well active layer; and a P-type doped layer. At least one of the N-type doped layer and the P-type doped layer comprises an uneven layer adapted to concentrate light emitting from the light emitting layer.
申请公布号
WO2016192363(A1)
申请公布日期
2016.12.08
申请号
WO2015CN96942
申请日期
2015.12.10
申请人
BOE TECHNOLOGY GROUP CO., LTD.;BOE (HEBEI) MOBILE DISPLAY TECHNOLOGY CO., LTD.