| 摘要 |
Provided is an inverting circuit including a MOS transistor (2) having a gate (14) connected to an input terminal (4), a drain (12) connected to an output terminal (6), and a source (10) grounded. In the inverting circuit, a power source (E) is connected between the source (10) of the MOS transistor (2) and a substrate (8) to produce a forward voltage smaller than a built-in potential difference at the PN junction between the source (10) and the substrate (8).
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