| 摘要 |
PURPOSE:To obtain a semiconductor device which has large capacity and stable quality by eliminating an aluminum layer making direct contact with a semiconductor substrate, and employing a stable metallic layer forming easy low resistance contact with the substrate and being chemically stable. CONSTITUTION:An alloy layer 11 having high melting point and chemically stability such as W, Mo or Ta containing 5-50wt% of Ti is coated on an N-type Si substrate 1 to make low resistance contact with the substrate 1. Then, one of elements 12 in V and III groups of long periodic table such as Co, Ni, Rh and the like is superimposed thereon, an Ag layer 13 is further superimposed thereon to facilitate an easy adherence of the low melting point adhesive material therewith. A semiconductor substrate 1 provided with this adhesive structure 14 can be easily adhered to the support 2 through the low melting point adhesive material 8 at 160-230 deg.C. According to this configuration, the boundary face between the N layer 1 and the stable alloy layer 11 makes completely low resistance contact, accordingly nonresistive barrier does not occur at all. In addition, it can improve the adhering strength mechanically with the substrate 1. |
