| 摘要 |
PURPOSE:To prevent disconnection of wire in a semiconductor device by forming a flat resin coating on an interlaye insulating film, selecting a mixture ratio of C2F6 with O2 to etch both films at an equal speed to form the interlayer insulating film having flat surface, and eliminating the step of multilayer wiring structure. CONSTITUTION:A condition of equalizing both etching speeds of an interlayer insulating film PSG and a negative type resist by selecting the mixture ratio of C2F6 with O2 is determined for the film PSG and the resist. An SiO2 film 13 and an Al wire 14 are formed on an Si substrate 11 and a diffused layer 12, a PSG 15 is superimposed thickner than the Al wire, and the negative type resist 16 is laminated so that the surface may become flat. Mixture gas is flowed under predetermined conditions to plasma etch it and stop the etching when the surface of the film 15 becomes flat. When superimposing second wire 17 and PSG 18 thereon, there can be obtained a multilayer wiring architecture having no step at the wire. |
