| 摘要 |
PURPOSE:To obtain an array of semiconductor having a superior operating characteristic and large area by a method wherein a polycrystalline Si film having 1cm<2>/V.Sec or more mobility is adhered on a substrate having the permeability to the near infrared radiation and the visible radiation like glass, amorphous Si, polycrystalline Si, etc., to form an active element. CONSTITUTION:An N-type polycristalline Si film 2 having 1cm<2>/V.Sec or more mobility is deposited in vacuum on the substrate 1 having the permeability to the near infrared rays and the visible rays like glass, amorphous Si, polycrystalline Si, etc. The surface of the film 2 is covered with an SiO2 film 3, appointed openings are formed in it, a P-type impurity ion is implanted in the exposed surface of the film 2 and is heat-treated to form P<+>-type source, drain regions 4. The film 3 is made to remain as the film 5 only at the field regions removing the other parts, a thin gate SiO2 film 6 is newly adhered between the regions 4 and at the same time the film 5 is made to be thicker. Openings are formed in the film 6 corresponding to the regions 4, and respective Al source electrode 7 and drain electrode 8 are adhered on the regions 4 and a gate electrode 9 is adhered on the film 6 locating between the electrodes of source and drain.
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