发明名称 SEMICONDUCTOR DEVICE
摘要 According to an embodiment of the present invention, a semiconductor device (1) has: a semiconductor substrate; a first well (15) that is provided on the semiconductor substrate; a second well (15) that is provided on the semiconductor substrate; a first fin (11) on the first well; a second fin (21) on the second well; and a first electrode (12a) connected to the first and second fins. The first well and the first fin (11) have a same conductivity type, and the second well and the second fin (21) have different conductivity types.
申请公布号 WO2016207930(A1) 申请公布日期 2016.12.29
申请号 WO2015JP03172 申请日期 2015.06.24
申请人 RENESAS ELECTRONICS CORPORATION 发明人 YABUUCHI, Makoto;ISHII, Yuichiro
分类号 H01L21/8238;H01L21/8234;H01L27/088;H01L27/092 主分类号 H01L21/8238
代理机构 代理人
主权项
地址