发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
According to an embodiment of the present invention, a semiconductor device (1) has: a semiconductor substrate; a first well (15) that is provided on the semiconductor substrate; a second well (15) that is provided on the semiconductor substrate; a first fin (11) on the first well; a second fin (21) on the second well; and a first electrode (12a) connected to the first and second fins. The first well and the first fin (11) have a same conductivity type, and the second well and the second fin (21) have different conductivity types. |
申请公布号 |
WO2016207930(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2015JP03172 |
申请日期 |
2015.06.24 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
YABUUCHI, Makoto;ISHII, Yuichiro |
分类号 |
H01L21/8238;H01L21/8234;H01L27/088;H01L27/092 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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