| 摘要 |
PURPOSE:To simply cut off an overcurrent in a semiconductor device by forming a constricted part at an internally wiring metal in a semiconductor integrated circuit to conduct a wireless bonding and thereby eliminating a difficulty of forming overcurrent preventing means at an external metallic lead wire. CONSTITUTION:An active element and a passive element are ordinarily formed on the main surface of an Si substrate, an SiO2 film 2 is coated thereon, electrode wire attaching portions of the element are photoetched, and openings are thus perforated thereat. Then, a wireless bonding metal projection 5 is coated in the opening. When a wire bonding aluminum wire 3 is then formed thereon, the wire 3 is formed in the following shape. That is, when aluminum is deposited in vacuum and a predetermined pattern is formed by photoetching, a constricted part for cutting off an overcurrent is formed in the vicinity of the pad. Thus, when the overcurrent flows, the constricted part will immediately melt, and it does not mortally affect the entire IC system. |
