| 摘要 |
The method for obtaining a semiconductor device which improved defects of a break of glass, poorness of leakage and a burst of the semiconductor elements, is disclosed. After semiconductor element(2) is set between sealing glass(1') of both sides, which are covered by tubular glass(3) and the tubular glass(3) is put into an enclosed chamber. After the tubular glass is melted at a temp. of 650≦̸C, enclosed chamber is kept by 2 kg/cm2 of atmospheric pressure. Thus, projection part(4) is formed between the sealing glass(1',1'). While the previous temp. is kept, atmospheric pressure of the chamber is changed by 19-2mmHg of atmospheric pressure to return projection parts(4) original state. Thus, sealing is finished by annealing the tubular glass in air.
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